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| CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C606E3 Issued Date : 2004.08.18 Revised Date : Page No. : 1/4 BTN3501E3 * Low VCE(sat) * High BVCEO * Excellent current gain characteristics Features Symbol BTN3501E3 Outline TO-220AB BBase CCollector EEmitter BCE Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25 Power Dissipation @ TC=25 Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw380s,Duty2%. Symbol VCBO VCEO VEBO IC ICP PD PD RJA RJC Tj Tstg Limits 80 80 6 10 20 (Note 1) 2 50 62.5 2.5 150 -55~+150 Unit V V V A W C/W C/W C C BTN3501E3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCEO(SUS) ICES IEBO *VCE(sat) *VBE(sat) *hFE *hFE fT Cob Min. 80 60 40 Typ. 0.3 1.0 50 130 Max. 10 50 0.6 1.5 Unit V A A V V MHz pF Spec. No. : C606E3 Issued Date : 2004.08.18 Revised Date : Page No. : 2/4 Test Conditions IC=30mA, IB=0 VCE=80V, VBE=0 VEB=5V, IC=0 IC=8A, IB=0.4A IC=8A, IB=0.8A VCE=1V, IC=2A VCE=1V, IC=4A VCE=6V, IC=500mA, f=20MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% Characteristic Curves Grounded Emitter Output Characteristics 2500 Collector Current---IC(mA) 2000 1500 1000 500 0 0 2 4 Collector To Emitter Voltage---VCE(V) 6 Collector Current---IC(mA) 10mA 8mA 6mA 4mA 2mA IB=0mA 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) 15mA 10mA 5mA IB=0mA 25mA 20mA Grounded Emitter Output Characteristics Grounded Emitter Output Characteristics 140 700 500uA 400uA 300uA 200uA 100uA IB=0uA 0 1 2 3 4 5 6 Grounded Emitter Output Characteristics 2.5mA Collector Current---IC(mA) Collector Current---IC(mA) 120 100 80 60 40 20 0 600 500 400 300 200 100 IB=0uA 0 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) 2mA 1.5mA 1mA 500uA Collector To Emitter Voltage---VCE(V) BTN3501E3 CYStek Product Specification CYStech Electronics Corp. Current Gain vs Collector Current 1000 Saturation Voltage---(mV) VCE = 5V Spec. No. : C606E3 Issued Date : 2004.08.18 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 10000 VCE(SAT) 1000 IC = 20IB IC = 50IB Current Gain---H FE 100 VCE = 2V VCE = 1V 100 IC = 10IB 10 1 10 100 1000 10000 Collector Current---IC(mA) 10 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Power Dissipation---PD(W) Saturation Voltage---(mV) VCE(SAT) @ IC = 10IB Power Derating Curve 2.5 2 1.5 1 0.5 0 1000 100 1 10 100 1000 10000 Collector Current---IC(mA) 0 50 100 150 200 Ambient Temperature---TA() Power Derating Curve 60 Power Dissipation---PD(W) 50 40 30 20 10 0 0 50 100 150 Case Temperature---TC() 200 BTN3501E3 CYStek Product Specification CYStech Electronics Corp. TO-220AB Dimension Spec. No. : C606E3 Issued Date : 2004.08.18 Revised Date : Page No. : 4/4 A D B E C Marking: N3501 H I G 4 P M 3 2 1 N Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector K O 3-Lead TO-220AB Plastic Package CYStek Package Code: E3 *: Typical DIM A B C D E G H Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN3501E3 CYStek Product Specification |
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